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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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BAT254-115 Datenblatt(PDF) 3 Page - NXP Semiconductors |
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BAT254-115 Datenblatt(HTML) 3 Page - NXP Semiconductors |
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3 / 7 page  2002 May 28 3 NXP Semiconductors Product data sheet Schottky barrier diode BAT254 ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. Note 1. Pulse test: tp = 300 μs; δ = 0.02. THERMAL CHARACTERISTICS Note 1. Refer to SOD110 standard mounting conditions. SYMBOL PARAMETER CONDITIONS MAX. UNIT VF forward voltage see Fig.2 IF = 0.1 mA 240 mV IF = 1 mA 320 mV IF = 10 mA 400 mV IF = 30 mA 500 mV IF = 100 mA 800 mV IR reverse current VR = 25 V; note 1; see Fig.3 2 μA trr reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.5 5 ns Cd diode capacitance f = 1 MHz; VR = 1 V; see Fig.4 10 pF SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 315 K/W |
Ähnliche Teilenummer - BAT254-115 |
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Ähnliche Beschreibung - BAT254-115 |
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