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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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IRF7207TR Datenblatt(PDF) 2 Page - International Rectifier |
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IRF7207TR Datenblatt(HTML) 2 Page - International Rectifier |
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2 / 7 page  IRF7207 2 www.irf.com Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -20 ––– ––– VVGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.011 ––– V/°C Reference to 25°C, ID = -1mA ––– ––– 0.06 VGS = -4.5V, ID = -5.4A ––– ––– 0.10 VGS = -2.7V, ID = -2.7A VGS(th) Gate Threshold Voltage -0.7 ––– ––– VVDS = VGS, ID = -250µA gfs Forward Transconductance 8.3 ––– ––– SVDS = -10V, ID = -5.4A ––– ––– -1.0 VDS = -16V, VGS = 0V ––– ––– -25 VDS = -16V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– -100 VGS = 12V Gate-to-Source Reverse Leakage ––– ––– 100 VGS = -12V Qg Total Gate Charge ––– 15 22 ID = -5.4A Qgs Gate-to-Source Charge ––– 2.2 3.3 nC VDS = -10V Qgd Gate-to-Drain ("Miller") Charge ––– 5.7 8.6 VGS = -4.5V, td(on) Turn-On Delay Time ––– 11 ––– VDD = -10V tr Rise Time ––– 24 ––– ID = -1.0A td(off) Turn-Off Delay Time ––– 43 ––– RG = 6.0Ω tf Fall Time ––– 41 ––– RD = 10Ω, Ciss Input Capacitance ––– 780 ––– VGS = 0V Coss Output Capacitance ––– 410 ––– pF VDS = -15V Crss Reverse Transfer Capacitance ––– 200 ––– ƒ = 1.0MHz, Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS µA Ω RDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current nA ns Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– -1.0 V TJ = 25°C, IS = -3.1A, VGS = 0V trr Reverse Recovery Time ––– 42 63 ns TJ = 25°C, IF = -3.1A Qrr Reverse RecoveryCharge ––– 50 75 nC di/dt = -100A/µs Source-Drain Ratings and Characteristics ––– ––– ––– ––– -43 -3.1 A S D G Repetitive rating; pulse width limited by max. junction temperature. I SD ≤ -5.4A, di/dt ≤ -79A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Notes: Starting T J = 25°C, L = 9.6mH RG = 25Ω, IAS = -5.4A. Pulse width ≤ 300µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t<10 sec |
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Ähnliche Beschreibung - IRF7207TR |
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