FEATURES

• SUPER LOW NOISE FIGURE:

NF = 0.35 dB TYP at f = 4 GHz

• HIGH ASSOCIATED GAIN:

µm

µm

• HERMETIC SEALED CERAMIC PACKAGE

• HIGH RELIABILITY

NE23383B

SUPER LOW NOISE AMPLIFIER

N-CHANNEL HJ FET

(SPACE QUALIFIED)

California Eastern Laboratories

PACKAGE OUTLINE 83B

DESCRIPTION

The NE23383B is a heterojunction FET that utilizes the

heterojunction to create high mobility electrons. The device

features mushroom shaped gate for decreased gate resis-

tance and improved power handling capabilities. The mush-

room gate structure also results in low noise figure and high

associated gain. The device is housed in a rugged hermeti-

cally sealed metal ceramic stripline package selected for

industrial and space applications.

NEC's stringent quality assurance and test procedures assure

the highest reliability and performance.

PART NUMBER

NE23383B

PACKAGE OUTLINE

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

NF

dB

0.35

0.45

dB

13.0

15.0

mA

15

40

80

µA

V

-0.2

-0.8

-2.0

ms

45

70

µA

0.5

10

µA

0.5

10

APPLICATION

• BEST SUITED FOR LOW NOISE AMPS STAGE AT

C AND X BAND

1.45 MAX

0.1

+0.07

-0.03

4.0 MIN (ALL LEADS)

0.5

± 0.1

1.88

± 0.3

1.88

± 0.3

1.0

± 0.1

1

2

4

3