EL2006 datasheet(5/12 Pages) ELANTEC

Teilenummer	EL2006

Bauteilbeschribung	High Gain Fast FET Input Op Amp

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EL2006EL2006A

High Gain Fast FET Input Op Amp

Applications Information

Contd

characteristic is well behaved well beyond the

unity gain frequency so that spurious ringing or

oscillation in the 100 MHZ – 200 MHz region is

avoided Finally we have provided temperature

compensation so that gain and stability are rela-

tively constant over temperature

These improvements are provided in a configura-

tion which is plug compatible with LH0032 and

similar products so that designers can easily up-

grade their system performance without exten-

sive re-design In most cases the EL2006 can be

used to replace LH0032 with no change in exter-

nal compensation

Video DAC Amplifiers

A typical application for the EL2006 is to pro-

vide gain for video signals

In the example

shown the EL2006 provides a gain of 2 with set-

tling time around 35 ns to 10 mV

Power Supply Decoupling

The EL2006EL2006A like most high-speed cir-

cuits is sensitive to layout and stray capacitance

Power supplies should be bypassed as near to

pins 10 and 12 as possible with low inductance

capacitors such as 001

mF disc ceramics Com-

pensation components should also be located

close to the appropriate pins to minimize stray

reactances

Input Current

Because the input devices are FETs the input

bias current may be expected to double for each

11 C junction temperature rise This characteris-

tic is plotted in the typical performance charac-

teristics graphs The device will self-heat due to

internal power dissipation after application of

power thus raising the FET junction tempera-

ture 40 C–60 C above the free-air ambient tem-

perature when supplies are g15V The device

temperature will stabilize within 5 – 10 minutes

after application of power and the input bias cur-

rents measured at the time will be indicative of

normal operating currents An additional rise will

occur as power is delivered to a load due to addi-

tional internal power dissipation

Power Dissipation

There is an additional effect on input bias current

as the input voltage is changed The effect com-

mon to all FETs is an avalanche-like increase in

gate current as the FET gate-to-drain voltage is

increased above a critical value depending on

FET geometry and doping levels This effect will

be noted as the input voltage of the EL2006 is

taken below ground potential when the supplies

are g15V All of the effects described here may

be minimized by operating the device with

VS s g15V

These effects are indicated in the typical per-

formance curves

Input Capacitance

The input capacitance to the EL2006EL2006A

is typically 2 pF and thus may form a significant

time constant with high value resistors For opti-

mum performance the input capacitance to the

inverting input should be compensated by a

small capacitor across the feedback resistor The

value is strongly dependent on layout and closed

loop gain but will typically be in the neighbor-

hood of several picofarads

In the non-inverting configuration it may be ad-

vantageous to bootstrap the case andor a guard

conductor to the inverting input

This serves

both to divert leakage currents away from the

non-inverting input and to reduce the effective

input capacitance A unity gain follower so treat-

ed will have an input capacitance undera1pF

2006 – 6

5

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