Datenblatt-Suchmaschine für elektronische Bauteile |
|
FCB36N60N Datenblatt(PDF) 2 Page - Fairchild Semiconductor |
|
FCB36N60N Datenblatt(HTML) 2 Page - Fairchild Semiconductor |
2 / 8 page www.fairchildsemi.com 2 ©2010 Fairchild Semiconductor Corporation FCB36N60N Rev. C0 Package Marking and Ordering Information Electrical Characteristics T C = 25 oC unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Device Marking Device Package Reel Size Tape Width Quantity FCB36N60N FCB36N60N D2-PAK 330mm 24mm 800 Symbol Parameter Test Conditions Min. Typ. Max. Unit BVDSS Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V, TC = 25 oC 600 - - V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 1 mA, Referenced to 25 oC- 0.7 - V/oC IDSS Zero Gate Voltage Drain Current VDS = 480 V, VGS = 0 V - - 10 μA VDS = 480 V, VGS = 0 V, TC = 125 oC - - 100 IGSS Gate to Body Leakage Current VGS = ±30 V, VDS = 0 V - - ±100 nA VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250 μA2.0 - 4.0 V RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 18 A - 81 90 m Ω gFS Forward Transconductance VDS = 40 V, ID = 18 A - 41 - S Ciss Input Capacitance VDS = 100 V, VGS = 0 V f = 1 MHz - 3595 4785 pF Coss Output Capacitance - 149 200 pF Crss Reverse Transfer Capacitance - 4 6 pF Coss Output Capacitance VDS = 380 V, VGS = 0 V, f = 1 MHz - 80 - pF Cosseff. Effective Output Capacitance VDS = 0 V to 380 V, VGS = 0 V - 361 - pF Qg(tot) Total Gate Charge at 10V VDS = 380 V, ID = 18 A, VGS = 10 V (Note 4) - 86 112 nC Qgs Gate to Source Gate Charge - 15.4 - nC Qgd Gate to Drain “Miller” Charge - 26.4 - nC ESR Equivalent Series Resistance (G-S) Drain Open - 1 - Ω td(on) Turn-On Delay Time VDD = 380 V, ID = 18 A RG = 4.7 Ω (Note 4) -23 56 ns tr Turn-On Rise Time - 22 54 ns td(off) Turn-Off Delay Time - 94 198 ns tf Turn-Off Fall Time - 4 18 ns IS Maximum Continuous Drain to Source Diode Forward Current - - 36 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 108 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 18 A - - 1.2 V trr Reverse Recovery Time VGS = 0 V, ISD = 18 A dIF/dt = 100 A/μs - 574 - ns Qrr Reverse Recovery Charge 10 - μC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 12 A, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 36 A, di/dt ≤ 200 A/μs, VDD = 380 V, Starting TJ = 25°C 4. Essentially Independent of Operating Temperature Typical Characteristics |
Ähnliche Teilenummer - FCB36N60N |
|
Ähnliche Beschreibung - FCB36N60N |
|
|
Link URL |
Privatsphäre und Datenschutz |
ALLDATASHEETDE.COM |
War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |