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FCB36N60N Datenblatt(PDF) 2 Page - Fairchild Semiconductor

Teilenummer FCB36N60N
Bauteilbeschribung  N-Channel SupreMOS짰 MOSFET 600 V, 36 A, 90 m廓
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Hersteller  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

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©2010 Fairchild Semiconductor Corporation
FCB36N60N Rev. C0
Package Marking and Ordering Information
Electrical Characteristics T
C = 25
oC unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FCB36N60N
FCB36N60N
D2-PAK
330mm
24mm
800
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain to Source Breakdown Voltage
ID = 1 mA, VGS = 0 V, TC = 25
oC
600
-
-
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 1 mA, Referenced to 25
oC-
0.7
-
V/oC
IDSS
Zero Gate Voltage Drain Current
VDS = 480 V, VGS = 0 V
-
-
10
μA
VDS = 480 V, VGS = 0 V, TC = 125
oC
-
-
100
IGSS
Gate to Body Leakage Current
VGS = ±30 V, VDS = 0 V
-
-
±100
nA
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 250 μA2.0
-
4.0
V
RDS(on)
Static Drain to Source On Resistance
VGS = 10 V, ID = 18 A
-
81
90
m
Ω
gFS
Forward Transconductance
VDS = 40 V, ID = 18 A
-
41
-
S
Ciss
Input Capacitance
VDS = 100 V, VGS = 0 V
f = 1 MHz
-
3595
4785
pF
Coss
Output Capacitance
-
149
200
pF
Crss
Reverse Transfer Capacitance
-
4
6
pF
Coss
Output Capacitance
VDS = 380 V, VGS = 0 V, f = 1 MHz
-
80
-
pF
Cosseff.
Effective Output Capacitance
VDS = 0 V to 380 V, VGS = 0 V
-
361
-
pF
Qg(tot)
Total Gate Charge at 10V
VDS = 380 V, ID = 18 A,
VGS = 10 V
(Note 4)
-
86
112
nC
Qgs
Gate to Source Gate Charge
-
15.4
-
nC
Qgd
Gate to Drain “Miller” Charge
-
26.4
-
nC
ESR
Equivalent Series Resistance (G-S)
Drain Open
-
1
-
Ω
td(on)
Turn-On Delay Time
VDD = 380 V, ID = 18 A
RG = 4.7 Ω
(Note 4)
-23
56
ns
tr
Turn-On Rise Time
-
22
54
ns
td(off)
Turn-Off Delay Time
-
94
198
ns
tf
Turn-Off Fall Time
-
4
18
ns
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
36
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
108
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 18 A
-
-
1.2
V
trr
Reverse Recovery Time
VGS = 0 V, ISD = 18 A
dIF/dt = 100 A/μs
-
574
-
ns
Qrr
Reverse Recovery Charge
10
-
μC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 12 A, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 36 A, di/dt ≤ 200 A/μs, VDD = 380 V, Starting TJ = 25°C
4. Essentially Independent of Operating Temperature Typical Characteristics


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