Datenblatt-Suchmaschine für elektronische Bauteile |
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FQD30N06TM Datenblatt(PDF) 1 Page - Fairchild Semiconductor |
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FQD30N06TM Datenblatt(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page November 2013 FQD30N06 N-Channel QFET® MOSFET 60 V, 22.7 A, 45 mΩ Description ©2001 Fairchild Semiconductor Corporation FQD30N06 Rev. C1 www.fairchildsemi.com 1 This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. Features Absolute Maximum Ratings T C = 25 oC unless otherwise noted. Thermal Characteristics Symbol Parameter FQD30N06TM Unit RJC Thermal Resistance, Junction to Case, Max. 2.85 oC/W RJA Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 110 Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max. 50 D-PAK G S D G S D • 22.7 A, 60 V, RDS(on) = 45 mΩ (Max.) @ VGS = 10V, ID = 11.4 A • Low Gate Charge (Typ. 19 nC) • Low Crss (Typ. 40 pF) • 100% Avalanche Tested Symbol Parameter FQD30N06 TM Unit VDSS Drain-Source Voltage 60 V ID Drain Current - Continuous (TC = 25°C) 22.7 A - Continuous (TC = 100°C) 14.3 A IDM Drain Current - Pulsed (Note 1) 90.8 A VGSS Gate-Source Voltage 25 V EAS Single Pulsed Avalanche Energy (Note 2) 280 mJ IAR Avalanche Current (Note 1) 22.7 A EAR Repetitive Avalanche Energy (Note 1) 4.4 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns PD Power Dissipation (TA = 25°C) * 2.5 W Power Dissipation (TC = 25°C) 44 W - Derate above 25°C 0.35 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C |
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