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FQD30N06TM Datenblatt(PDF) 1 Page - Fairchild Semiconductor

Teilenummer FQD30N06TM
Bauteilbeschribung  N-Channel QFET짰 MOSFET 60 V, 22.7 A, 45 m廓
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Hersteller  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

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November 2013
FQD30N06
N-Channel QFET® MOSFET
60 V, 22.7 A, 45 mΩ
Description
©2001 Fairchild Semiconductor Corporation
FQD30N06 Rev. C1
www.fairchildsemi.com
1
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, audio amplifier, DC motor control, and
variable switching power applications.
Features
Absolute Maximum Ratings T
C = 25
oC unless otherwise noted.
Thermal Characteristics
Symbol
Parameter
FQD30N06TM
Unit
RJC
Thermal Resistance, Junction to Case, Max.
2.85
oC/W
RJA
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
110
Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max.
50
D-PAK
G
S
D
G
S
D
• 22.7 A, 60 V, RDS(on) = 45 mΩ (Max.) @ VGS = 10V,
ID = 11.4 A
• Low Gate Charge (Typ. 19 nC)
• Low Crss (Typ. 40 pF)
• 100% Avalanche Tested
Symbol
Parameter
FQD30N06
TM
Unit
VDSS
Drain-Source Voltage
60
V
ID
Drain Current
- Continuous (TC = 25°C)
22.7
A
- Continuous (TC = 100°C)
14.3
A
IDM
Drain Current
- Pulsed
(Note 1)
90.8
A
VGSS
Gate-Source Voltage
 25
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
280
mJ
IAR
Avalanche Current
(Note 1)
22.7
A
EAR
Repetitive Avalanche Energy
(Note 1)
4.4
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
7.0
V/ns
PD
Power Dissipation (TA = 25°C) *
2.5
W
Power Dissipation (TC = 25°C)
44
W
- Derate above 25°C
0.35
W/°C
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C


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