Datenblatt-Suchmaschine für elektronische Bauteile |
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BD249 Datenblatt(PDF) 2 Page - Savantic, Inc. |
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BD249 Datenblatt(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors BD249/A/B/C CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BD249 45 BD249A 60 BD249B 80 V(BR)CEO Collector-emitter breakdown voltage BD249C IC=30mA ;IB=0 100 V VCEsat-1 Collector-emitter saturation voltage IC=15A ;IB=1.5A 1.8 V VCEsat-2 Collector-emitter saturation voltage IC=25A ;IB=5A 4 V VBE-1 Base-emitter on voltage IC=15A ; VCE=4V 2 V VBE-2 Base-emitter on voltage IC=25A ; VCE=4V 4 V BD249/249A VCE=30V; IB=0 ICEO Collector cut-off current BD249B/249C VCE=60V; IB=0 1 mA IEBO Emitter cut-off current VEB=5V; IC=0 1 mA hFE-1 DC current gain IC=1.5A ; VCE=4V 25 hFE-2 DC current gain IC=15A ; VCE=4V 10 hFE-3 DC current gain IC=25A ; VCE=4V 5 Switching times ton Turn-on time 0.3 µs toff Turn-off time IC=1A; IB1=-IB2=0.5A RL=5A 0.9 µs |
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Ähnliche Beschreibung - BD249 |
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