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MJE340 Datenblatt(PDF) 1 Page - Continental Device India Limited

Teilenummer MJE340
Bauteilbeschribung  NPN EPITAXIAL SILICON POWER TRANSISTOR
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Hersteller  CDIL [Continental Device India Limited]
Direct Link  http://www.cdilsemi.com
Logo CDIL - Continental Device India Limited

MJE340 Datenblatt(HTML) 1 Page - Continental Device India Limited

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NPN EPITAXIAL SILICON POWER TRANSISTOR
MJE340
TO126
Plastic Package
For use in High Voltage General Purpose Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
UNIT
Collector Emitter Voltage
VCEO
V
Collector Base Voltage
VCBO
V
Emitter Base Voltage
VEBO
V
Collector Current Continuous
IC
mA
Power Dissipation @ Ta=25ºC
PD
W
Derate above 25ºC
mW/ºC
Power Dissipation @ Tc=25ºC
PD
W
Derate above 25ºC
W/ºC
Operating And Storage Junction
Temperature Range
Tj, Tstg
ºC
THERMAL CHARACTERISTICS
Junction to Ambient in free air
Rth (j-a)
ºC/W
Junction to Case
Rth (j-c)
ºC/W
ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
MAX
UNIT
Collector Emitter Sustaining Voltage
*VCEO (sus)
IC=1mA, IB=0
V
Collector Cut Off Current
ICBO
VCB=300V, IE=0
100
µA
Emitter Cut Off Current
IEBO
VEB=3V, IC=0
100
µA
DC Current Gain
hFE
IC=50mA, VCE=10V
240
0.16
- 65 to +150
300
500
1.25
10
20
VALUE
300
300
3.0
100
6.25
MIN
30
B
C
E
Continental Device India Limited
Data Sheet
Page 1 of 3
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company


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