Datenblatt-Suchmaschine für elektronische Bauteile |
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2SJ355 Datenblatt(PDF) 1 Page - NEC |
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2SJ355 Datenblatt(HTML) 1 Page - NEC |
1 / 6 page 1996 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ355 P-CHANNEL MOS FET FOR HIGH SWITCHING Document No. D11217EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan PACKAGE DIMENSIONS (in mm) 1.6 ±0.2 4.5 ±0.1 0.42 ±0.06 1.5 0.42 ±0.06 0.47 ±0.06 3.0 0.41 +0.03 –0.05 1.5 ±0.1 S D G EQUIVALENT CIRCUIT Source (S) Internal diode Gate protection diode Gate (G) Drain (D) PIN CONNECTIONS S: D: G: Source Drain Gate Marking: PQ The 2SJ355 is a P-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance and superb switching characteristics and is ideal for driving the actuators and DC/DC converters. FEATURES • Can be directly driven by 5-V IC • Low ON resistance RDS(on) = 0.60 Ω MAX. @VGS = –4 V, ID = –1.0 A RDS(on) = 0.35 Ω MAX. @VGS = –10 V, ID = –1.0 A ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) PARAMETER SYMBOL TEST CONDITIONS RATING UNIT Drain to Source Voltage VDSS VGS = 0 –30 V Gate to Source Voltage VGSS VDS = 0 –20/+10 V Drain Current (DC) ID(DC) ±2.0 A Drain Current (Pulse) ID(pulse) PW ≤ 10 ms ±4.0 A Duty cycle ≤ 1 % Total Power Dissipation PT 16 cm2 × 0.7 mm, ceramic substrate used 2.0 W Channel Temperature Tch 150 ˚C Storage Temperature Tstg –55 to +150 ˚C The internal diode connected between the gate and source of this product is to protect the product from static electricity. If the product is used in a circuit where the rated voltage of the product may be exceeded, connect a protection circuit. Take adequate preventive measures against static electricity when handling this product. The information in this document is subject to change without notice. |
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