FMMT455 datasheet(1/2 Pages) FAIRCHILD

Teilenummer	FMMT455

Bauteilbeschribung	SOT23 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR

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Hersteller	FAIRCHILD [Fairchild Semiconductor]

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SOT23 NPN SILICON PLANAR

HIGH PERFORMANCE TRANSISTOR

ISSUE 3 FEBRUARY 1996

FEATURES

* 140 Volt VCEO

* 1 Amp continuous current

*Ptot= 500 mW

PARTMARKING DETAIL

455

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

160

V

Collector-Emitter Voltage

VCEO

140

V

Emitter-Base Voltage

VEBO

5V

Peak Pulse Current

ICM

2A

Continuous Collector Current

IC

1A

Base Current

IB

200

mA

Power Dissipation at Tamb=25°C

Ptot

500

mW

Operating and Storage Temperature Range

Tj:Tstg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb= 25°C).

PARAMETER

SYMBOL

MIN. MAX.

UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

V(BR)CBO

160

V

IC=100µA

Collector-Emitter

Sustaining Voltage

VCEO(sus) 140

V

IC=10mA*

Emitter-Base

Breakdown Voltage

V(BR)EBO

5V

IE=100µA

Collector Cut-Off Current ICBO

0.1

µ

A

VCB=140V

Emitter Cut-Off Current

IEBO

0.1

µ

A

VEB=4V

Collector-Emitter

Saturation Voltage

VCE(sat)

0.7

V

IC=150mA, IB=15mA

Static Forward Current

Transfer Ratio

hFE

100

10 Typ

300

IC=150mA, VCE=10V*

IC=1A, VCE=10V*

Transition

Frequency

fT

100

MHz

IC=50mA, VCE=10V

f=100MHz

Output Capacitance

Cobo

15

pF

VCB=10V, f=1MHz

* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

Spice parameter data is available upon request for this device

FMMT455

SOT23

C

B

E

FMMT455

3 - 110

3 - 111

TYPICAL CHARACTERISTICS

VCE(sat) v IC

I+ -

Collector Current (Amps)

I+ -

Collector Current (Amps)

I+ -

Collector Current (Amps)

hFE v IC

VBE(sat) v IC

I+ -

Collector Current (Amps)

VBE(on) v IC

Single Pulse Test at Tamb=25°C

0.001

0.01

10

0.1

1

20

40

60

80

100

0.2

0.001

0.1

1

0.4

0.6

1.0

0

0.001

0.01

1

0.1

0.2

0.3

0.4

VCE=10V

IC/IB=10

Typical Switching Speeds

I+ -

Collector Current (Amps)

0.1

1

0.01

tf

100

0

td

nS

50

0.01

0.0001

0.001

1

0.01

0.1

0.6

0.8

1.0

1.2

VCE=10V

0.4

0.8

tf

ns

900

tr

ns

300

200

100

400

500

0

600

500

400

700

800

300

ts

µS

ts

td

tr

0

3

2

1

6

5

4

7

IB1=IB2=IC/10

VCE=10V

10

1

Safe Operating Area

VCE - Collector Emitter Voltage (V)

110

0.1

100

0.01

1s

DC

100ms

10ms

100µs

1ms

1000

0.001

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