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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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FQD4P40TM Datenblatt(PDF) 2 Page - Fairchild Semiconductor |
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FQD4P40TM Datenblatt(HTML) 2 Page - Fairchild Semiconductor |
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2 / 8 page  Package Marking and Ordering Information Part Number Top Mark Package Reel Size Tape Width Quantity FQD4P40 FQD4P40TM DPAK 330 mm 16 mm 2500 units ©2000 Fairchild Semiconductor Corporation FQD4P40 Rev. C0 www.fairchildsemi.com 2 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 62 mH, IAS = -2.7 A, VDD = -50 V, RG = 25 Ω, starting TJ = 25oC. 3. ISD ≤ -3.5 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25oC. 4. Essentially independent of operating temperature. Packing Method Tape and Reel Electrical Characteristics T C = 25 oC unless otherwise noted. (Note 4) Symbol Parameter Test Conditions Min Typ Max Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -400 -- -- V ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = -250 µA, Referenced to 25°C -- 0.36 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = -400 V, VGS = 0 V -- -- -1 µA VDS = -320 V, TC = 125°C -- -- -10 µA IGSSF Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V -- -- -100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V -- -- 100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -3.0 -- -5.0 V RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -1.35 A -- 2.44 3.1 Ω gFS Forward Transconductance VDS = -50 V, ID = -1.35 A -- 2.5 -- S Dynamic Characteristics Ciss Input Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz -- 520 680 pF Coss Output Capacitance -- 80 105 pF Crss Reverse Transfer Capacitance -- 11 15 pF Switching Characteristics td(on) Turn-On Delay Time VDD = -200 V, ID = -3.5 A, RG = 25 Ω -- 13 35 ns tr Turn-On Rise Time -- 55 120 ns td(off) Turn-Off Delay Time -- 35 80 ns tf Turn-Off Fall Time -- 37 85 ns Qg Total Gate Charge VDS = -320 V, ID = -3.5 A, VGS = -10 V -- 18 23 nC Qgs Gate-Source Charge -- 3.8 -- nC Qgd Gate-Drain Charge -- 9.4 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- -2.7 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- -10.8 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -2.7 A -- -- -5.0 V trr Reverse Recovery Time VGS = 0 V, IS = -3.5 A, dIF / dt = 100 A/µs -- 260 -- ns Qrr Reverse Recovery Charge -- 1.4 -- µC (Note 4) |
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Ähnliche Beschreibung - FQD4P40TM |
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