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FP4050 Datenblatt(PDF) 1 Page - Filtronic Compound Semiconductors |
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FP4050 Datenblatt(HTML) 1 Page - Filtronic Compound Semiconductors |
1 / 2 page PRELIMINARY DATA SHEET FP4050 2-WATT POWER PHEMT Phone: (408) 988-1845 http:// www.filtronicsolidstate.com Revised: 10/04/00 Fax: (408) 970-9950 • FEATURES ♦ 48 dBm IP3 at 2 GHz ♦ 34 dBm P-1dB at 2 GHz ♦ 14 dB Power Gain at 2 GHz • DESCRIPTION AND APPLICATIONS The FP4050 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct- write 0.50 um by 400 um Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The FP4050 features Si3N4 passivation. Typical applications include commercial and military high-performance power amplifiers, including SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output amplifiers, and medium-haul digital radio transmitters. This device is also suitable as a power stage for WLAN and ISM band spread spectrum applications. • ELECTRICAL SPECIFICATIONS @ TAmbient = 22 ±3 °C Parameter Symbol Test Conditions Min Typ Max Units Output Power @ 1 dB Compression P1dB f = 2 GHz; VDS = 8V; IDS = 50% IDSS 34 dBm Power Gain @ 1 dB Compression G1dB f = 2 GHz; VDS = 8V; IDS = 50% IDSS 14 dB Saturated Drain-Source Current IDSS VDS = 2V; VGS = 0V 950 1100 1300 mA Maximum Drain-Source Current IMAX VDS = 2V; VGS = 1V 2200 mA Transconductance GM VDS = 2 V; VGS = 0 V 880 mS Pinch-Off Voltage VP VDS = 2 V; IDS = 10 mA -1.2 V Gate-Drain Breakdown Voltage Magnitude |VBDGD| IGS = 20 mA 12 15 V Gate-Source Breakdown Voltage Magnitude |VBDGS| IGS = 20 mA 12 15 V Gate-Source Leakage Current Magnitude |IGSL| VGS = -5 V 0.2 mA Thermal Resistivity QJC 15 °C/W DRAIN BOND PAD SOURCE BOND PAD (2X) GATE BOND PAD |
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