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1N4150 Datenblatt(PDF) 1 Page - Continental Device India Limited

Teilenummer 1N4150
Bauteilbeschribung  HIGH SPEED SILICON SWITCHING DIODE
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Hersteller  CDIL [Continental Device India Limited]
Direct Link  http://www.cdilsemi.com
Logo CDIL - Continental Device India Limited

1N4150 Datenblatt(HTML) 1 Page - Continental Device India Limited

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HIGH SPEED SILICON SWITCHING DIODE
1N4150
DO-35
Glass Axial Package
FEATURES
General Purpose used in Computer and Industrial Applications
ABSOLUTE MAXIMUM RATINGS (Ta=25
oC unless specified otherwise)
DESCRIPTION
SYMBOL
UNIT
Reverse Voltage (Continuous)
VR
V
Forward Current (DC)
IF
mA
Repetitive Peak Forward Current
IFRM
mA
Non Repetitive Peak Surge Current
tp=1µ
µs
tp=1s
Power Dissipation @ Ta=25
oC
mW
Derating Factor
mW/ºC
Operating And Storage Junction
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
MIN
MAX
Forward Voltage
VF
0.54
0.62
V
0.66
0.74
V
0.76
0.86
V
0.82
0.92
V
0.87
1.0
V
100
nA
100
µ
A
Diode Capacitance
Cd
2.5
pF
Reverse Recovery Time
trr
4
ns
6
ns
6
ns
Forward Recovery Time
tfr
10
ns
1N4150 Rev_1 311003D
VALUE
VR=50V
VR=50V, Tj=150oC
VR=0, f=1MHz
Reverse Current
DESCRIPTION
RL=100Ω
500
2.85
VALUE
IF=1mA
50
300
600
-65 to +200
IR
IF=100mA
IF=200mA
IF=10mA
IF=50mA
IF=10mA to 200mA
to
Measured @ IR=0.1xIF
IR=10mA to 200mA
RL=100Ω
IF=200mA to 400mA to
IR=200mA to 400mA
RL=100Ω
IF=10mA to IR=1mA
Measured @ IR=0.1xIF
Duty Cycle<1.0%
Measured @ VF=1V
Measured @ IR=0.1mA
Switched from I=0 to IF=200mA
tr=0.4ns, tp=100ns,
IFSM
UNIT
TEST CONDITIONS
SYMBOL
ºC
mA
PTA
Tj, Tstg
4000
500
Continental Device India Limited
Data Sheet
Page 1 of 3
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company


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