FQD10N20L datasheet(2/8 Pages) FAIRCHILD

Teilenummer	FQD10N20L

Bauteilbeschribung	N-Channel QFET짰 MOSFET 200 V, 7.6 A, 360 m廓

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Hersteller	FAIRCHILD [Fairchild Semiconductor]

Direct Link	http://www.fairchildsemi.com

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Package Marking and Ordering Information

www.fairchildsemi.com

2

Part Number

Top Mark

Package

Reel Size

Tape Width

Quantity

FQD10N20L

FQD10N20LTM

DPAK

330 mm

16 mm

2500 units

Packing Method

Tape and Reel

Electrical Characteristics

TC = 25°C unless otherwise noted.

(Note 4)

Symbol

Parameter

Test Conditions

Min

.

Typ

.

Max

.

Unit

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = 250 µA

200

--

V

∆BV

DSS

/

∆T

J

Breakdown Voltage Temperature

Coefficient

ID = 250 µA, Referenced to 25°C

--

0.18

--

V/°C

IDSS

Zero Gate Voltage Drain Current

VDS = 200 V, VGS = 0 V

--

1

µA

VDS = 160 V, TC = 125°C

--

10

µA

IGSSF

Gate-Body Leakage Current, Forward

VGS = 20 V, VDS = 0 V

--

100

nA

IGSSR

Gate-Body Leakage Current, Reverse

VGS = -20 V, VDS = 0 V

--

-100

nA

On Characteristics

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250 µA

1.0

--

2.0

V

RDS(on)

Static Drain-Source

On-Resistance

VGS = 10 V, ID = 3.8 A

VGS = 5 V, ID = 3.8 A

--

0.29

0.3

0.36

0.38

Ω

gFS

Forward Transconductance

VDS = 30 V, ID = 3.8 A

--

9.6

--

S

Dynamic Characteristics

Ciss

Input Capacitance

VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

--

640

830

pF

Coss

Output Capacitance

--

95

125

pF

Crss

Reverse Transfer Capacitance

--

14

18

pF

Switching Characteristics

td(on)

Turn-On Delay Time

VDD = 100 V, ID = 10 A,

RG = 25 Ω

--

13

35

ns

tr

Turn-On Rise Time

--

150

310

ns

td(off)

Turn-Off Delay Time

--

50

110

ns

tf

Turn-Off Fall Time

--

95

200

ns

Qg

Total Gate Charge

VDS = 160 V, ID = 10 A,

VGS = 5 V

--

13

17

nC

Qgs

Gate-Source Charge

--

2.4

--

nC

Qgd

Gate-Drain Charge

--

6.1

--

nC

Drain-Source Diode Characteristics and Maximum Ratings

IS

Maximum Continuous Drain-Source Diode Forward Current

--

7.6

A

ISM

Maximum Pulsed Drain-Source Diode Forward Current

--

30.4

A

VSD

Drain-Source Diode Forward Voltage

VGS = 0 V, IS = 7.6 A

--

1.5

V

trr

Reverse Recovery Time

VGS = 0 V, IS = 10 A,

dIF / dt = 100 A/µs

--

120

--

ns

Qrr

Reverse Recovery Charge

--

0.57

--

µC

Notes:

1. Repetitive

rating : pulse-width limited by maximum junction temperature.

2. L = 4.7 mH, IAS = 7.6 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.

3. ISD ≤ 10 A, di/dt ≤ 300 A/µs, VDD ≤ BVDSS, starting TJ = 25°C.

4. Essentially independent of operating temperature

.

FQD10N20L Rev. C1

Ähnliche Beschreibung - FQD10N20L

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Fairchild Semiconductor	FQD10N20LTF	765Kb / 8P	N-Channel QFET MOSFET 200 V, 7.6 A, 360 m
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Kersemi Electronic Co.,...	KSMD10N20C	2Mb / 6P	N-Channel MOSFET 200 V, 7.8 A, 360 m
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