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FM330-A Datenblatt(PDF) 1 Page - Formosa MS

Teilenummer FM330-A
Bauteilbeschribung  Silicon epitaxial planer type
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Hersteller  FORMOSA [Formosa MS]
Direct Link  http://www.formosams.com
Logo FORMOSA - Formosa MS

FM330-A Datenblatt(HTML) 1 Page - Formosa MS

  FM330-A Datasheet HTML 1Page - Formosa MS FM330-A Datasheet HTML 2Page - Formosa MS  
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Chip Schottky Barrier Diodes
Silicon epitaxial planer type
0.185(4.8)
0.177(4.4)
0.012(0.3) Typ.
0.110(2.8)
0.094(2.4)
0.165(4.2)
0.150(3.8)
0.067(1.7)
0.060(1.5)
0.040 (1.0) Typ.
0.040(1.0) Typ.
Dimensions in inches and (millimeters)
SMA
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDECDO-214AC
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting Position : Any
Weight : 0.0015 ounce, 0.05 gram
FM320-A THRU FM3100-A
Formosa MS
(V)
(V)
(V)
(V)
(oC)
FM320-A
SS32
20
14
20
FM330-A
SS33
30
21
30
FM340-A
SS34
40
28
40
FM350-A
SS35
50
35
50
FM360-A
SS36
60
42
60
FM380-A
SS38
80
56
80
FM3100-A
S310
100
70
100
SYMBOLS
MARKING
CODE
Operating
temperature
V
RRM
*1
V
RMS
*2
V
R
*3
V
F
*4
0.50
0.75
0.85
-55 to +125
-55 to +150
MAXIMUM RATINGS
(AT TA=25
oC unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Forward rectified current
See Fig.1
IO
3.0
A
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
IFSM
80
A
VR = VRRM TA =
25
oC
0.5
mA
VR = VRRM TA = 125
oC
20
mA
Thermal resistance
Junction to ambient
R
qJA
80
oC / w
Diode junction capacitance
f=1MHz and applied 4vDC reverse voltage
CJ
250
pF
Storage temperature
TSTG
-55
+150
oC
Reverse current
IR
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage


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