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Document Number: 91068

4

S11-1050-Rev. C, 30-May-11

This document is subject to change without notice.

IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL

Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Maximum Safe Operating Area

2400

2000

1600

1200

0

400

800

C

iss

C

rss

C

oss

V

C

C

C

91068_05

20

16

12

8

0

4

08

40

32

24

16

V

V

For test circuit

see figure 13

V

91068_06

I

48

0.6

1.4

1.2

1.0

0.8

25

150

V

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1.6

Operation in this area limited

by R

DS(on)

T

T

Single Pulse

2

5

0.1

2

5

1

2

5

10

2

5

25

110

25

25

91068_08