Datenblatt-Suchmaschine für elektronische Bauteile |
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BC560C Datenblatt(PDF) 1 Page - Continental Device India Limited |
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BC560C Datenblatt(HTML) 1 Page - Continental Device India Limited |
1 / 5 page PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC559, B, C BC560, B, C TO-92 Plastic Package Low Noise Transistors ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL BC559 BC560 UNITS Collector Emitter Voltage VCEO 30 45 V Collector Base Voltage VCBO 30 50 V Emitter Base Voltage VEBO 55 V Collector Current Continuous IC 100 mA Power Dissipation @ Tc=25ºC PD 625 mW Derate Above 25ºC 5 mW/ºC Power Dissipation @ Tc=25ºC PD 1.5 W Derate Above 25ºC 12 mW/ºC Operating And Storage Junction Tj, Tstg -55 to +150 ºC Temperature Range THERMAL RESISTANCE Junction to ambient Rth(j-a) 200 ºC/W Junction to case Rth(j-c) 83.3 ºC/W Continental Device India Limited Data Sheet Page 1 of 5 Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company |
Ähnliche Teilenummer - BC560C |
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Ähnliche Beschreibung - BC560C |
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