Datenblatt-Suchmaschine für elektronische Bauteile |
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BU406D Datenblatt(PDF) 2 Page - Savantic, Inc. |
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BU406D Datenblatt(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors BU406D BU407D CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BU406D 200 VCEO(SUS) Collector-emitter sustaining voltage BU407D IC=100mA ; IB=0 150 V VCEsat Collector-emitter saturation voltage IC=5A ;IB=0.65A 1.0 V VBEsat Base-emitter saturation voltage IC=5A ;IB=0.65A 1.3 V BU406D VCE=400V; VBE=-1.5V ICEV Collector cut-off current BU407D VCE=330V; VBE=-1.5V 15 mA IEBO Emitter cut-off current VEB=6.0V; IC=0 400 mA hFE DC current gain IC=2A ; VCE=5V 15 VF Diode forward voltage IF=5A 1.5 V fT Transition frequency IC=0.5A ;VCE=10V;f=1.0MHz 10 MHz tf Fall time IC=5A ;VCC=40V IBend=0.65A 0.75 µs |
Ähnliche Teilenummer - BU406D |
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Ähnliche Beschreibung - BU406D |
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