Datenblatt-Suchmaschine für elektronische Bauteile |
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74HCT32S14-13 Datenblatt(PDF) 4 Page - Diodes Incorporated |
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74HCT32S14-13 Datenblatt(HTML) 4 Page - Diodes Incorporated |
4 / 8 page 74HCT32 Document number: DS35334 Rev. 3 - 2 4 of 8 www.diodes.com January 2013 © Diodes Incorporated 74HCT32 Switching Characteristics Symbol Parameter Test Conditions VCC TA = +25°C -40°C to +85°C -40°C to +125°C Unit Min Typ Max Max Max tPD Propagation Delay AN to YN Figure 1 CL = 50pF 4.5V — 11 24 30 36 ns tt Transition Time Figure 1 CL = 50pF 4.5V — 7 15 19 22 ns Operating Characteristics (@TA = +25°C, unless otherwise specified.) Parameter Test Conditions VCC = 5.5 V Unit Typ Cpd Power Dissipation Capacitance per Gate f = 1 MHz 28 pF CI Input Capacitance VI = VCC – or GND 4 pF Parameter Measurement Information Vcc Inputs VM CL VI tr/tf 4.5V 3.0V 3ns 1.5V VOH/2 Voltage Waveform Pulse Duration Voltage Waveform Propagation Delay Times Inverting and Non Inverting Outputs Notes: A. Includes test lead and test apparatus capacitance. B. All pulses are supplied at pulse repetition rate ≤ 1 MHz. C. Inputs are measured separately one transition per measurement. D. tPLH and tPHL are the same as tPD. Figure 1 Load Circuit and Voltage Waveforms |
Ähnliche Teilenummer - 74HCT32S14-13 |
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Ähnliche Beschreibung - 74HCT32S14-13 |
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