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IRF7105TRPBF Datenblatt(PDF) 1 Page - International Rectifier

Teilenummer IRF7105TRPBF
Bauteilbeschribung  Advanced Process Technology
Download  10 Pages
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Hersteller  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF7105TRPBF Datenblatt(HTML) 1 Page - International Rectifier

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IRF7105PbF
HEXFET® Power MOSFET
10/6/04
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Dual N and P Channel Mosfet
l
Surface Mount
l
Available in Tape & Reel
l
Dynamic dv/dt Rating
l
Fast Switching
l
Lead-Free
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques. Power dissipation of greater than 0.8W
is possible in a typical PCB mount application.
SO-8
Description
Max.
N-Channel
P-Channel
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
3.5
-2.3
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
2.8-1.8
IDM
Pulsed Drain Current 
14
-10
PD @TC = 25°C
Power Dissipation
2.0
Linear Derating Factor
0.016
W/°C
VGS
Gate-to-Source Voltage
± 20
V
dv/dt
Peak Diode Recovery dv/dt ‚
3.0
-3.0
V/nS
TJ,TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Parameter
Units
A
Absolute Maximum Ratings
W
Parameter
Min.
Typ.
Max.
Units
RθJA
Maximum Junction-to-Ambient
„
–––
–––
62.5
°C/W
Thermal Resistance Ratings
N-Ch P-Ch
VDSS
25V
-25V
RDS(on) 0.10Ω 0.25Ω
ID
3.5A
-2.3A
D1
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
P-CHANNEL MOSFET
N-CHANNEL MOSFET
www.irf.com
1
PD - 95164


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