©

1996

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK2053

The 2SK2053 is an N-channel vertical MOS FET. Because

it can be driven by a voltage as low as 1.5 V and it is not

necessary to consider a drive current, this FET is ideal as an

actuator for low-current portable systems such as headphone

stereos and video cameras.

FEATURES

•

New package intermediate between small signal and

power types

•

Gate can be driven by 1.5 V

•

Low ON resistance

PARAMETER

SYMBOL

TEST CONDITIONS

RATING

UNIT

Drain to Source Voltage

16

V

Gate to Source Voltage

±7.0

V

Drain Current (DC)

±5.0

A

Drain Current (Pulse)

PW

≤ 10 ms, duty cycle ≤ 50 %

±10.0

A

Total Power Dissipation

× 0.7 mm ceramic substrate used

2.0

W

Channel Temperature

150

˚C

Operating Temperature

–20 to +60

˚C

Storage Temperature

–55 to +150

˚C

Document No. D11224EJ2V0DS00 (2nd edition)

Date Published June 1996 P

Printed in Japan

PACKAGE DIMENSIONS (in mm)

2.0 ±0.2

5.7 ±0.1

0.5 ±0.1

2.1

4.2

0.5 ±0.1

0.85

±0.1

SD

G

1.5 ±0.1

0.4 ±0.05

Marking: NA1

EQUIVALENT CURCUIT

Source (S)

Internal

diode

Gate

protection

diode

Gate (G)

Drain (D)

PIN

CONNECTIONS

S:

D:

G:

Source

Drain

Gate

N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING