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STF18NM60N Datenblatt(PDF) 1 Page - STMicroelectronics

Teilenummer STF18NM60N
Bauteilbeschribung  N-channel 600 V, 0.27 廓, 13 A MDmesh??II Power MOSFET in TO-220, TO-220FP, TO-247, D짼PAK and I짼PAK
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
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October 2010
Doc ID 15868 Rev 3
1/18
18
STB18NM60N, STF18NM60N, STI18NM60N
STP18NM60N, STW18NM60N
N-channel 600 V, 0.27
Ω, 13 A MDmesh™ II Power MOSFET
in TO-220, TO-220FP, TO-247, D²PAK and I²PAK
Features
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Application
Switching applications
Description
These devices are made using the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
Figure 1.
Internal schematic diagram
Order codes
VDSS
(@Tjmax)
RDS(on)
max.
ID
PW
STB18NM60N
650 V
< 0.285
Ω 13 A
110 W
STF18NM60N
30 W
STI18NM60N
110 W
STP18NM60N
STW18NM60N
TO-220
TO-220FP
D²PAK
1
2
3
1
2
3
TO-247
1
2
3
1
3
1
2
3
I²PAK
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STB18NM60N
18NM60N
D²PAK
Tape and reel
STF18NM60N
18NM60N
TO-220FP
Tube
STI18NM60N
18NM60N
I²PAK
Tube
STP18NM60N
18NM60N
TO-220
Tube
STW18NM60N
18NM60N
TO-247
Tube
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