L6386AD datasheet(8/15 Pages) STMICROELECTRONICS

Teilenummer	L6386AD

Bauteilbeschribung	High voltage high and low-side driver

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Hersteller	STMICROELECTRONICS [STMicroelectronics]

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Bootstrap driver

L6386AD

8/15

DocID14914 Rev 2

4

Bootstrap driver

A bootstrap circuitry is needed to supply the high voltage section. This function is normally

accomplished by a high voltage fast recovery diode (Figure 4 a). In the L6386AD device

a patented integrated structure replaces the external diode. It is realized by a high voltage

DMOS, driven synchronously with the low-side driver (LVG), with a diode in series, as

shown in Figure 4 b. An internal charge pump (Figure 4 b) provides the DMOS driving

voltage. The diode connected in series to the DMOS has been added to avoid undesirable

turn-on.

CBOOT selection and charging

To choose the proper CBOOT value, the external MOS can be seen as an equivalent

capacitor. This capacitor CEXT is related to the MOS total gate charge:

Equation 1

The ratio between the capacitors CEXT and CBOOT is proportional to the cyclical voltage

loss. It has to be:

CBOOT>>>CEXT

E.g.: if Qgate is 30 nC and Vgate is 10 V, CEXT is 3 nF. With CBOOT = 100 nF the drop would

be 300 mV.

If HVG has to be supplied for a long time, the CBOOT selection has to take into account also

the leakage losses.

E.g.: HVG steady state consumption is lower than 200

A, so if HVG TON is 5 ms, CBOOT

has to supply 1

C to CEXT. This charge on a 1 F capacitor means a voltage drop of 1 V.

The internal bootstrap driver gives great advantages: the external fast recovery diode can

be avoided (it usually has a great leakage current).

This structure can work only if VOUT is close to GND (or lower) and in the meanwhile the

LVG is on. The charging time (Tcharge ) of the CBOOT is the time in which both conditions are

fulfilled and it has to be long enough to charge the capacitor.

The bootstrap driver introduces a voltage drop due to the DMOS RDS(on) (typical value:

125

). At low frequency this drop can be neglected. Anyway increasing the frequency it

must be taken into account.

The following equation is useful to compute the drop on the bootstrap DMOS:

Equation 2

where Qgate is the gate charge of the external power MOS, Rdson is the on-resistance of the

bootstrap DMOS, and Tcharge is the charging time of the bootstrap capacitor.

CEXT

Qgate

Vgate

---------------

=

Vdrop

Ich e

arg Rdson

Vdrop



Qgate

Tch e

arg

-------------------Rdson

==

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