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FP0025E Datenblatt(PDF) 1 Page - Solid States Devices, Inc |
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FP0025E Datenblatt(HTML) 1 Page - Solid States Devices, Inc |
1 / 3 page NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FP0025E DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4470 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFF9130 __ __ __ │ │ │ │ │ │ │ │ │ └ │ │ │ │ │ └ └ Screening2/ __ = Not Screened TX = TX Level TXV = TXV Level S = S Level Lead Option __ = Straight Leads DB = Down Bend UB = Up Bend Package M = TO-254 Z = TO-254Z SFF9130M SFF9130Z -11 AMP P-Channel POWER MOSFET 100 Volts 0.30 Ω typical Features: Rugged Construction with Poly Silicon Gate Low RDS(on) and High Transconductance Excellent High Temperature Stability Very Fast Switching Speed Fast Recovery and Superior dv/dt Performance Increased Reverse Energy Capability Low Input and Transfer Capacitance for Easy Paralleling Hermetically Sealed TX, TXV, and Space Level Screening Available Replaces IRF9130 Types Maximum Ratings3/ Symbol Value Units Drain – Source Voltage VDS -100 V Gate – Source Voltage VGS +20 V Continuous Drain Current TC = 25ºC TC = 100ºC ID -11 -7 A Operating & Storage Temperature TOP & TSTG -55 to +150 ºC Thermal Resistance, Junction to Case RJC 2 ºC/W Total Device Power Dissipation TC = 25ºC TC = -55ºC PD 63 48 Watts Single Pulse Avalanche Energy EAS 81 mJ Repetitive Avalanche Energy EAR 7.5 mJ NOTES: TO-254 (M) TO-254Z (Z) *Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%. 1/ For ordering information, price, and availability - contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ Unless otherwise specified, all electrical characteristics @25 oC. |
Ähnliche Teilenummer - FP0025E |
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Ähnliche Beschreibung - FP0025E |
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