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FP0025E Datenblatt(PDF) 1 Page - Solid States Devices, Inc

Teilenummer FP0025E
Bauteilbeschribung  P-Channel POWER MOSFET
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Hersteller  SSDI [Solid States Devices, Inc]
Direct Link  http://www.ssdi-power.com
Logo SSDI - Solid States Devices, Inc

FP0025E Datenblatt(HTML) 1 Page - Solid States Devices, Inc

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NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FP0025E
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4470 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information
1/
SFF9130
__ __ __
Screening2/
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
Lead Option
__ = Straight Leads
DB = Down Bend
UB = Up Bend
Package
M = TO-254
Z = TO-254Z
SFF9130M
SFF9130Z
-11 AMP
P-Channel POWER MOSFET
100 Volts
0.30 Ω typical
Features:
Rugged Construction with Poly Silicon Gate
Low RDS(on) and High Transconductance
Excellent High Temperature Stability
Very Fast Switching Speed
Fast Recovery and Superior dv/dt Performance
Increased Reverse Energy Capability
Low Input and Transfer Capacitance for Easy
Paralleling
Hermetically Sealed
TX, TXV, and Space Level Screening Available
Replaces IRF9130 Types
Maximum Ratings3/
Symbol
Value
Units
Drain – Source Voltage
VDS
-100
V
Gate – Source Voltage
VGS
+20
V
Continuous Drain Current
TC = 25ºC
TC = 100ºC
ID
-11
-7
A
Operating & Storage Temperature
TOP & TSTG
-55 to +150
ºC
Thermal Resistance, Junction to Case
RJC
2
ºC/W
Total Device Power Dissipation
TC = 25ºC
TC = -55ºC
PD
63
48
Watts
Single Pulse Avalanche Energy
EAS
81
mJ
Repetitive Avalanche Energy
EAR
7.5
mJ
NOTES:
TO-254 (M)
TO-254Z (Z)
*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.
1/ For ordering information, price, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Unless otherwise specified, all electrical characteristics @25
oC.


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