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©

1999

MOS FIELD EFFECT TRANSISTOR

2SK3107

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR HIGH SPEED SWITCHING

DATA SHEET

Document No.

D13802EJ2V0DS00 (2nd edition)

Date Published

August 1999 NS CP(K)

Printed in Japan

The mark 5

5

5

5 shows major revised points.

DESCRIPTION

The 2SK3107 is a switching device which can be driven directly by a

The 2SK3107 has excellent switching characteristics, and is suitable for

use as a high-speed switching device in digital circuits.

FEATURES

• Can be driven by a 2.5-V power source

• Low gate cut-off voltage

ORDERING INFORMATION

PART NUMBER

PACKAGE

2SK3107

SC-75(USM)

Drain to Source Voltage

30

V

Gate to Source Voltage

±20

V

Drain Current (DC)

±0.1

A

Drain Current (pulse)

Note1

±0.4

A

Total Power Dissipation

Note2

200

mW

Channel Temperature

150

°C

Storage Temperature

–55 to +150

°C

Notes 1. PW

≤ 10

µs, Duty Cycle ≤ 1 %

2. Mounted on ceramic substrate of 3.0 cm

Remark

The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

PACKAGE DRAWING (Unit : mm)

0.3 ± 0.05

G

0.2

+0.1

–0

0.5

0.5

1.0

1.6 ± 0.1

D

S

0.6

0.75 ± 0.05

0 to 0.1

0.1

+0.1

–0.05

EQUIVALENT CIRCUIT

Source

Body

Diode

Gate

Protection

Diode

Marking: D1

Gate

Drain

5