Datenblatt-Suchmaschine für elektronische Bauteile |
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STB155N3H6 Datenblatt(PDF) 7 Page - STMicroelectronics |
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STB155N3H6 Datenblatt(HTML) 7 Page - STMicroelectronics |
7 / 18 page STB155N3H6, STD155N3H6 Electrical characteristics Doc ID 018793 Rev 2 7/ Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics VGS 6 4 2 0 0 30 Qg(nC) (V) 60 8 40 50 10 VDD=15V ID=8A 70 12 20 10 AM09154v1 C 1000 0 10 VDS(V) (pF) 5 15 Ciss Coss Crss 100 20 25 AM09155v1 VGS(th) 0.6 0.4 0.2 0 -75 TJ(°C) (norm) -25 0.8 75 25 125 1.0 1.2 ID=250µA 175 AM09156v1 RDS(on) 0.6 0.4 0.2 0 -75 TJ(°C) (norm) -25 75 25 175 125 1.2 1.0 0.8 1.8 1.6 1.4 ID=40A VGS=10V AM09157v1 VSD 0 40 ISD(A) (V) 20 60 80 0.4 0.5 0.6 0.7 0.8 0.9 1.0 TJ=-55°C TJ=175°C TJ=25°C AM09158v1 |
Ähnliche Teilenummer - STB155N3H6 |
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Ähnliche Beschreibung - STB155N3H6 |
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