Datenblatt-Suchmaschine für elektronische Bauteile |
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STY130NF20D Datenblatt(PDF) 3 Page - STMicroelectronics |
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STY130NF20D Datenblatt(HTML) 3 Page - STMicroelectronics |
3 / 14 page DocID15300 Rev 4 3/14 STY130NF20D Electrical ratings 14 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V GS Gate-source voltage ± 20 V I D Drain current (continuous) at T C = 25 °C 130 A I D Drain current (continuous) at T C =100 °C 82 A I DM (1) 1. Pulse width limited by T jmax Drain current (pulsed) 520 A P TOT Total dissipation at T C = 25 °C 450 W I AR (1) Avalanche current, repetitive or not repetitive 130 A E AS Single pulse avalanche energy (2) 2. Starting T j = 25 °C, I D = I AR , V DD = 50 V 800 mJ dv/dt (3) 3. I SD ≤ 130 A, di/dt ≤ 1000 A/μs, peak V DS ≤ V (BR)DSS Peak diode recovery voltage slope 25 V/ns T J T stg Operating junction temperature Storage temperature - 55 to 150 °C Table 3. Thermal resistance Symbol Parameter Value Unit R thj-case Thermal resistance junction-case 0.28 °C/W R thj-amb Thermal resistance junction-ambient 30 °C/W |
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