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SZP6SMB16AT3G Datenblatt(PDF) 2 Page - ON Semiconductor

Teilenummer SZP6SMB16AT3G
Bauteilbeschribung  600 Watt Peak Power Zener Transient Voltage Suppressors
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Hersteller  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

SZP6SMB16AT3G Datenblatt(HTML) 2 Page - ON Semiconductor

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Uni−Directional TVS
IPP
IF
V
I
IR
IT
VRWM
VC VBR
VF
P6SMB6.8AT3G Series, SZP6SMB6.8AT3G Series
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1) @ TL = 25°C, Pulse Width = 1 ms
PPK
600
W
DC Power Dissipation @ TL = 75°C Measured Zero Lead Length (Note 2)
Derate Above 75°C
Thermal Resistance from Junction−to−Lead
PD
RqJL
3.0
40
25
W
mW/°C
°C/W
DC Power Dissipation (Note 3) @ TA = 25°C
Derate Above 25°C
Thermal Resistance from Junction−to−Ambient
PD
RqJA
0.55
4.4
226
W
mW/°C
°C/W
Forward Surge Current (Note 4) @ TA = 25°C
IFSM
100
A
Operating and Storage Temperature Range
TJ, Tstg
−65 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 10 X 1000 ms, non−repetitive
2. 1″ square copper pad, FR−4 board
3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted, VF = 3.5 V Max. @ IF
(Note 4) = 30 A, VF = 1.3 V Max. @ IF (Note 4) = 3 A) (Note 5)
Symbol
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
Working Peak Reverse Voltage
IR
Maximum Reverse Leakage Current @ VRWM
VBR
Breakdown Voltage @ IT
IT
Test Current
QVBR
Maximum Temperature Coefficient of VBR
IF
Forward Current
VF
Forward Voltage @ IF
5. 1/2 sine wave or equivalent, PW = 8.3 ms, non−repetitive
duty cycle


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