Datenblatt-Suchmaschine für elektronische Bauteile |
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BDX65C Datenblatt(PDF) 1 Page - Savantic, Inc. |
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BDX65C Datenblatt(HTML) 1 Page - Savantic, Inc. |
1 / 3 page SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BDX65C DESCRIPTION ·With TO-3 package ·DARLINGTON ·Complement to type BDX64C APPLICATIONS ·Designed for power amplification and switching applications. PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 120 V VCEO Collector-emitter voltage Open base 120 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 12 A ICM Collector current(peak) 16 A IB Base current 0.2 A PT Total power dissipation TC=25 117 W Tj Junction temperature -55~200 Tstg Storage temperature -55~200 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance from junction to case 1.5 /W Fig.1 simplified outline (TO-3) and symbol |
Ähnliche Teilenummer - BDX65C |
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Ähnliche Beschreibung - BDX65C |
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