IRF7905TRPBF datasheet(8/10 Pages) IRF

Teilenummer	IRF7905TRPBF

Bauteilbeschribung	Dual SO-8 MOSFET for POL

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Hersteller	IRF [International Rectifier]

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8 / 10 page

IRF7905PbF

8

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Fig 30a. Switching Time Test Circuit

Fig 30b. Switching Time Waveforms

V

GS

V

DS

90%

10%

t

d(on)

t

d(off)

t

r

t

f

Fig 29b. Unclamped Inductive Waveforms

Fig 29a. Unclamped Inductive Test Circuit

tp

V(BR)DSS

IAS

RG

IAS

0.01

Ω

tp

D.U.T

L

VDS

+

- VDD

DRIVER

A

15V

20V

VGS

Fig 31a. Gate Charge Test Circuit

Fig 31b. Gate Charge Waveform

Vds

Vgs

Id

Vgs(th)

Qgs1 Qgs2

Qgd

Qgodr

Fig 28.

Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

P.W.

Period

di/dt

Diode Recovery

dv/dt

Ripple

≤ 5%

Body Diode

Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

VGS=10V

VDD

ISD

Driver Gate Drive

D.U.T. ISD Waveform

D.U.T. VDS Waveform

Inductor Curent

D =

P.W.

Period

* VGS = 5V for Logic Level Devices

*

+

-

+

-

RG

VDD

• dv/dt controlled by RG

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

D.U.T

Inductor Current

D.U.T.

VDS

ID

IG

-3mA

VGS

.3

µF

50K

Ω

.2

µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

RG

IAS

0.01

Ω

tp

D.U.T

L

VDS

+

- VDD

DRIVER

A

15V

20V

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Ähnliche Beschreibung - IRF7905TRPBF

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