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SD101B Datenblatt(PDF) 1 Page - General Semiconductor

Teilenummer SD101B
Bauteilbeschribung  Schottky Diodes
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Hersteller  GE [General Semiconductor]
Direct Link  http://www.vishay.com
Logo GE - General Semiconductor

SD101B Datenblatt(HTML) 1 Page - General Semiconductor

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FEATURES
Schottky Diodes
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
DO-35
max. ∅
Cathode
.020 (0.52)
Mark
max. ∅.079 (2.0)
Dimensions in inches and (millimeters)
Case: DO-35 Glass Case
Weight: approx. 0.13 g
4/98
SD101A THRU SD101C
Symbol
Value
Unit
Peak Inverse Voltage
SD101A
SD101B
SD101C
VRRM
VRRM
VRRM
60
50
40
V
V
V
Power Dissipation (Infinite Heat Sink)
Ptot
4001) 2)
mW
Max. Single Cycle Surge
10
µs Square Wave
IFSM
2A
Junction Temperature
Tj
1251)
°C
Storage Temperature Range
TS
– 55 to +1501)
°C
1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature
For general purpose applications.
The LL101 series is a metal-on-sili-
con Schottky barrier device which is
protected by a PN junction guard ring.
The low forward voltage drop and fast
switching make it ideal for protection of MOS
devices, steering, biasing, and coupling diodes
for fast switching and low logic level applications.
These diodes are also available in the SOD-123
case with type designations SD101AW thru
SD101CW and in the MiniMELF case with
type designations LL101A thru LL101C.


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