Datenblatt-Suchmaschine für elektronische Bauteile |
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STD65N55LF3 Datenblatt(PDF) 3 Page - STMicroelectronics |
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STD65N55LF3 Datenblatt(HTML) 3 Page - STMicroelectronics |
3 / 13 page STD65N55LF3 Electrical ratings Doc ID 16371 Rev 2 3/13 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS=0) 55 V VGS Gate-Source voltage ± 20 V ID Drain current (continuous) at TC = 25 °C 80 A ID Drain current (continuous) at TC = 100 °C 56 A IDM (1) 1. Pulse width limited by safe operating area Drain current (pulsed) 320 A PTOT Total dissipation at TC = 25 °C 110 W Derating factor 0.73 W/°C dv/dt (2) 2. ISD ≤ 65 A, di/dt ≤300 A/µs, VDD ≤ V(BR)DSS. Tj ≤ Tjmax Peak diode recovery voltage slope 11 V/ns EAS (3) 3. Starting Tj = 25 °C, ID = 10 A, VDD = 25 V Single pulse avalanche energy 300 mJ Tj Tstg Operating junction temperature Storage temperature -55 to 175 °C Table 3. Thermal resistance Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 1.36 °C/W Rthj-pcb (1) 1. When mounted on FR-4 board of 1inch², 2oz Cu. Thermal resistance junction-pcb max 50 °C/W |
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