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IRF7752PBF Datenblatt(PDF) 1 Page - International Rectifier

Teilenummer IRF7752PBF
Bauteilbeschribung  Ultra Low On-Resistance
Download  8 Pages
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Hersteller  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF7752PBF Datenblatt(HTML) 1 Page - International Rectifier

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HEXFET® Power MOSFET
HEXFET® power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design , that Inter-
national Rectifier is well known for,
provides thedesigner
with an extremely efficient and reliable device for use
in battery and load management.
The TSSOP-8 package, has 45% less footprint area of the
standard SO-8. This makes the TSSOP-8 an ideal device
for applications where printed circuit board space is at a
premium.
The low profile (<1.1mm) of the TSSOP-8 will allow it to fit
easily into extremely thin application environments such
as portable electronics and PCMCIA cards.
IRF7752PbF
Description
l Ultra Low On-Resistance
l Dual N-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.1mm)
l Available in Tape & Reel
l Lead-Free
TSSOP-8
Parameter
Max.
Units
VDS
Drain- Source Voltage
30
V
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
±4.6
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
±3.7
A
IDM
Pulsed Drain Current

±37
PD @TA = 25°C
Power Dissipation
1.0
PD @TA = 70°C
Power Dissipation
0.64
Linear Derating Factor
8.0
mW/°C
VGS
Gate-to-Source Voltage
± 12
V
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Parameter
Max.
Units
RθJA
Maximum Junction-to-Ambient
ƒ
125
°C/W
Thermal Resistance
Absolute Maximum Ratings
W
www.irf.com
1
05/14/09
VDSS
RDS(on) max
ID
30V
0.030@VGS = 10V
4.6A
0.036@VGS = 4.5V
3.9A
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