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FQD20N06LTF Datenblatt(PDF) 2 Page - Fairchild Semiconductor |
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FQD20N06LTF Datenblatt(HTML) 2 Page - Fairchild Semiconductor |
2 / 8 page Package Marking and Ordering Information ©2009 Fairchild Semiconductor Corporation FQU20N06L Rev. C3 www.fairchildsemi.com 2 Part Number Top Mark Package Reel Size Tape Width Quantity FQU20N06L FQU20N06LTU IPAK N/A N/A 70 units Packing Method Tube Electrical Characteristics T C = 25°C unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 60 -- -- V ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.06 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V -- -- 1 µA VDS = 48 V, TC = 125°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1.0 -- 2.5 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 8.6 A VGS=5V,ID=8.6A -- -- 0.046 0.057 0.06 0.075 Ω gFS Forward Transconductance VDS = 25 V, ID = 8.6 A -- 11 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 480 630 pF Coss Output Capacitance -- 175 230 pF Crss Reverse Transfer Capacitance -- 35 45 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 30 V, ID = 10.5 A, RG = 25 Ω -- 10 30 ns tr Turn-On Rise Time -- 165 340 ns td(off) Turn-Off Delay Time -- 35 80 ns tf Turn-Off Fall Time -- 70 150 ns Qg Total Gate Charge VDS = 48 V, ID = 21 A, VGS = 5 V -- 9.5 13 nC Qgs Gate-Source Charge -- 2.5 -- nC Qgd Gate-Drain Charge -- 5.5 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 17.2 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 68.8 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 17.2 A -- -- 1.5 V trr Reverse Recovery Time VGS = 0 V, IF = 21 A, dIF / dt = 100 A/µs -- 54 -- ns Qrr Reverse Recovery Charge -- 75 -- nC (Note 4) (Note 4) Notes: 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2. L = 670 µH, IAS = 17.2 A, VDD = 25 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 21 A, di/dt ≤ 300 A/µs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating tmperature. |
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Ähnliche Beschreibung - FQD20N06LTF |
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