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FQD20N06LTF Datenblatt(PDF) 2 Page - Fairchild Semiconductor

Teilenummer FQD20N06LTF
Bauteilbeschribung  N-Channel QFET MOSFET 60 V, 17.2 A, 42 m
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Hersteller  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQD20N06LTF Datenblatt(HTML) 2 Page - Fairchild Semiconductor

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Package Marking and Ordering Information
©2009 Fairchild Semiconductor Corporation
FQU20N06L Rev. C3
www.fairchildsemi.com
2
Part Number
Top Mark
Package
Reel Size
Tape Width
Quantity
FQU20N06L
FQU20N06LTU
IPAK
N/A
N/A
70 units
Packing Method
Tube
Electrical Characteristics T
C = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
60
--
--
V
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
--
0.06
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 60 V, VGS = 0 V
--
--
1
µA
VDS = 48 V, TC = 125°C
--
--
10
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 20 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -20 V, VDS = 0 V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
1.0
--
2.5
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 8.6 A
VGS=5V,ID=8.6A
--
--
0.046
0.057
0.06
0.075
gFS
Forward Transconductance
VDS = 25 V, ID = 8.6 A
--
11
--
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
480
630
pF
Coss
Output Capacitance
--
175
230
pF
Crss
Reverse Transfer Capacitance
--
35
45
pF
Switching Characteristics
td(on)
Turn-On Delay Time
VDD = 30 V, ID = 10.5 A,
RG = 25 Ω
--
10
30
ns
tr
Turn-On Rise Time
--
165
340
ns
td(off)
Turn-Off Delay Time
--
35
80
ns
tf
Turn-Off Fall Time
--
70
150
ns
Qg
Total Gate Charge
VDS = 48 V, ID = 21 A,
VGS = 5 V
--
9.5
13
nC
Qgs
Gate-Source Charge
--
2.5
--
nC
Qgd
Gate-Drain Charge
--
5.5
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
17.2
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
68.8
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 17.2 A
--
--
1.5
V
trr
Reverse Recovery Time
VGS = 0 V, IF = 21 A,
dIF / dt = 100 A/µs
--
54
--
ns
Qrr
Reverse Recovery Charge
--
75
--
nC
(Note 4)
(Note 4)
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 670 µH, IAS = 17.2 A, VDD = 25 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 21 A, di/dt ≤ 300 A/µs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating tmperature.


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