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FQD5N60C Datenblatt(PDF) 1 Page - Fairchild Semiconductor |
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FQD5N60C Datenblatt(HTML) 1 Page - Fairchild Semiconductor |
1 / 9 page FQD5N60C / FQU5N60C 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. Features • 2.8A, 600V, RDS(on) = 2.5Ω @VGS = 10 V • Low gate charge ( typical 15 nC) • Low Crss ( typical 6.5 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics * When mounted on the minimum pad size recommended (PCB Mount) Symbol Parameter FQD5N60C / FQU5N60C Units VDSS Drain-Source Voltage 600 V ID Drain Current - Continuous (TC = 25°C) 2.8 A - Continuous (TC = 100°C) 1.8 A IDM Drain Current - Pulsed (Note 1) 11.2 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 210 mJ IAR Avalanche Current (Note 1) 2.8 A EAR Repetitive Avalanche Energy (Note 1) 4.9 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TA = 25°C)* 2.5 W Power Dissipation (TC = 25°C) 49 W - Derate above 25°C 0.39 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case - 2.56 °C/W RθJA Thermal Resistance, Junction-to-Ambient* - 50 °C/W RθJA Thermal Resistance, Junction-to-Ambient - 110 °C/W ● ● ● ● ● ● ● ● ● ● ● ● ▲ ▲ ▲ ▲ ! ! ! ! ! ! ! ! ! ! ! ! ◀ ◀ ◀ ◀ ● ● ● ● ● ● ● ● ● ● ● ● ▲ ▲ ▲ ▲ ! ! ! ! ! ! ! ! ! ! ! ! ◀ ◀ ◀ ◀ S D G I-PAK FQU Series D-PAK FQD Series GS D GS D October 2008 QFET ® • RoHS Compliant ©2008 Fairchild Semiconductor Internationa Rev. A1, October 2008 |
Ähnliche Teilenummer - FQD5N60C |
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Ähnliche Beschreibung - FQD5N60C |
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