2SC1212 datasheet(2/5 Pages) HITACHI

Teilenummer	2SC1212

Bauteilbeschribung	Silicon NPN Epitaxial

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Hersteller	HITACHI [Hitachi Semiconductor]

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2SC1212, 2SC1212A

2

Electrical Characteristics (Ta = 25°C)

2SC1212

2SC1212A

Item

Symbol

Min

Typ

Max

Min

Typ

Max

Unit

Test conditions

Collector to base

breakdown voltage

V

(BR)CBO

50

—

80

—

V

I

C = 1 mA, IE = 0

Collector to emitter

breakdown voltage

V

(BR)CEO

50

—

80

—

V

I

C = 10 mA, RBE = ∞

Emitter to base

breakdown voltage

V

(BR)EBO

4

—

—4

——

V

I

E = 1 mA, IC = 0

Collector cutoff current

I

CBO

——5

—

5

µAV

CB = 50 V, IE = 0

DC current tarnsfer ratio h

FE*

1

60

—

200

60

—

200

V

CE = 4 V, IC = 50 mA

h

FE

20

—

20

—

V

CE = 4 V, IC = 1 A

(pulse test)

Base to emitter voltage

V

BE

—

0.65

1.0

—

0.65

1.0

V

CE = 4 V, IC = 50 mA

Collector to emitter

saturation voltage

V

CE(sat)

—

0.75

1.5

—

0.75

1.5

V

I

C = 1 A, IB = 0.1 A

(pulse test)

Gain bandwidth product f

T

—

160

—

160

—

MHz

V

CE = 4 V, IC = 30 mA

Note:

1. The 2SC1212 and 2SC1212A are grouped by h

FE as follows.

BC

60 to 120

100 to 200

1.0

0.75

0.5

0.25

0

50

100

200

150

Ambient temperature Ta (

°C)

Maximum Collector Dissipation Curve

12

8

4

0

50

100

150

Case temperature TC (°C)

Maximum Collector Dissipation Curve

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