Datenblatt-Suchmaschine für elektronische Bauteile |
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STF32NM50N Datenblatt(PDF) 5 Page - STMicroelectronics |
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STF32NM50N Datenblatt(HTML) 5 Page - STMicroelectronics |
5 / 21 page STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N Electrical characteristics Doc ID 023436 Rev 1 5/21 Table 6. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current Source-drain current (pulsed) - 22 88 A A VSD (2) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. Forward on voltage ISD = 22 A, VGS = 0 - 1.6 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 22 A, VDD = 60 V di/dt=100 A/µs (see Figure 20) - 328 5 30.5 ns nC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 22 A,VDD = 60 V di/dt=100 A/µs, TJ = 150 °C (see Figure 20) - 392 6.5 32.8 ns nC A |
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Ähnliche Beschreibung - STF32NM50N |
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