Datenblatt-Suchmaschine für elektronische Bauteile |
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2SD1101 Datenblatt(PDF) 2 Page - Hitachi Semiconductor |
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2SD1101 Datenblatt(HTML) 2 Page - Hitachi Semiconductor |
2 / 5 page 2SD1101 2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage V CBO 25 V Collector to emitter voltage V CEO 20 V Emitter to base voltage V EBO 5V Collector current I C 0.7 A Collector peak current i C(peak) 1A Collector power dissipation P C 150 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V (BR)CBO 25 — — V I C = 10 µA, IE = 0 Collector to emitter breakdown voltage V (BR)CEO 20 — — V I C = 1 mA, RBE = ∞ Emitter to base breakdown voltage V (BR)EBO 5— — V I E = 10 µA, IC = 0 Collector cutoff current I CBO — — 1.0 µAV CB = 20 V, IE = 0 DC current transfer ratio h FE* 1 85 — 240 V CE = 1 V, IC = 0.15 A* 2 Collector to emitter saturation voltage V CE(sat) — — 0.5 V I C = 0.5 A, IB = 0.05 A* 2 Base to emitter voltage V BE — — 1.0 V V CE = 1 V, IC = 0.15 A* 2 Notes: 1. The 2SD1101 is grouped by h FE as follows. 2. Pulse test Grade B C Mark AB AC h FE 85 to 170 120 to 240 See characteristic curves of 2SD467. |
Ähnliche Teilenummer - 2SD1101 |
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Ähnliche Beschreibung - 2SD1101 |
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