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2SD1113 Datenblatt(PDF) 1 Page - Hitachi Semiconductor |
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2SD1113 Datenblatt(HTML) 1 Page - Hitachi Semiconductor |
1 / 5 page 2SD1113(K) Silicon NPN Triple Diffused Application Igniter Outline TO-220AB 1. Base 2. Collector (Flange) 3. Emitter 1 2 3 6 k Ω (Typ) 450 Ω (Typ) 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage V CBO 300 V Collector to emitter voltage V CEO 300 V Emitter to base voltage V EBO 7V Collector current I C 6A Collector peak current I C(peak) 10 A Collector power dissipation P C* 1 40 W Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Value at T C = 25°C. |
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