Datenblatt-Suchmaschine für elektronische Bauteile |
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WXC Datenblatt(PDF) 1 Page - List of Unclassifed Manufacturers |
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WXC Datenblatt(HTML) 1 Page - List of Unclassifed Manufacturers |
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1 / 1 page Data Sheet DS00113 / June 2010 Process information and data (“Information”) in this document is an outline only , for general information purposes ; it does not constitute a representation or warranty as to capability , performance or suitability of the Process for any given application. User must satisfy himself that the Process is suitable for his requirements . While Information herein is believed correct and accurate , it is subject to change without notice and Plessey accepts no liability arising from the use or application of such Information. All use of , and product manufactured and supplied using the Process , will be subject to Plessey’s standard trading terms, which are available on request . Plessey Semiconductors Ltd. Tamerton Road, Roborough, Plymouth, United Kingdom, PL6 7BQ Tel: +44 1752 693000 Fax: +44 1752 693200 Web: www.plesseysemiconductors.com WXC Bipolar Process Data Sheet DS00113 / June 2010 Applications • Linear Applications • DC to DC converters • Switching regulators • Power management Key Process Feature • 1.8nF/sq μm MIS capacitors • High value polysilicon resistor • Very low leakage currents • Low flicker noise npn cross section Epitaxy (n-) BN Substrate (p-) DC Collector LOCOS BP IS LOCOS Base Emitter IS BP Minimum geometry npn fT curve 0.0 2.0 4.0 6.0 8.0 1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 IC (A) fT (GHz) Vce=2V Capacitors / Diodes Type Value Units Max V MIS Cap 0.5 fF/sq μm 32V J Cap 2.0 fF/sq μm 5V Schottky 0.5 Volt(Vf) 32V Resistor Values parameter Value Units PC 200 Ω Base 600 Ω IR 2.0 k Ω Poly 1.2* k Ω * Near Zero temperature coefficient Design Rules Feature Min μm Spacing μm Emitter 3.5 2.0 Resistors 3.0 4.0 Contact 1.5 3.0 1st Layer metal (1 μm) 3.5 2.0 2 nd layer metal (2 μm) 6.0 3.0 Transistor parameters (3.5 x 3.5um NPN emitter, LPNP 6um base width, Substrate PNP Parameter Condition NPN LPNP SPNP Hfe Ic=10 μA Vcb=0 110 300 800 VAF 160V 42V 30V BVceo Ic=1 μA >32V >32V >25V BVcbo Ic=1 μA >45V >45V >45V BVebo Ib=1 μA >5V >32V >45V BVibo Ib=1 μA >32V BVcsub Ic=1 μA >45V NPN fT Vce=2V 1.2GHz LPNP fT Vce=2V 20MHz WXC is a 32 Volt Linear Bipolar Process featuring vertical NPN and lateral PNP transistors with diffused resistors, polysilicon resistors, Schottky diodes and nitride capacitors. |
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