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WXC Datenblatt(PDF) 1 Page - List of Unclassifed Manufacturers

Teilenummer WXC
Bauteilbeschribung  Bipolar Process
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Data Sheet DS00113 / June 2010
Process information and data (“Information”) in this document is an outline only , for general information purposes ; it does not constitute a representation or warranty
as to capability , performance or suitability of the Process for any given application. User must satisfy himself that the Process is suitable for his requirements .
While Information herein is believed correct and accurate , it is subject to change without notice and Plessey accepts no liability arising from the use or application of
such Information.
All use of , and product manufactured and supplied using the Process , will be subject to Plessey’s standard trading terms, which are available on request .
Plessey Semiconductors Ltd. Tamerton Road, Roborough, Plymouth, United Kingdom, PL6 7BQ
Tel: +44 1752 693000
Fax: +44 1752 693200
Web: www.plesseysemiconductors.com
WXC
Bipolar Process
Data Sheet DS00113 / June 2010
Applications
Linear Applications
DC to DC converters
Switching regulators
Power management
Key Process Feature
1.8nF/sq
μm MIS capacitors
High value polysilicon resistor
Very low leakage currents
Low flicker noise
npn cross section
Epitaxy (n-)
BN
Substrate (p-)
DC
Collector
LOCOS
BP
IS
LOCOS
Base
Emitter
IS
BP
Minimum geometry npn fT curve
0.0
2.0
4.0
6.0
8.0
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
IC (A)
fT (GHz)
Vce=2V
Capacitors / Diodes
Type
Value
Units
Max V
MIS Cap
0.5
fF/sq
μm
32V
J Cap
2.0
fF/sq
μm
5V
Schottky
0.5
Volt(Vf)
32V
Resistor Values
parameter
Value
Units
PC
200
Ω
Base
600
Ω
IR
2.0
k
Ω
Poly
1.2*
k
Ω
* Near Zero temperature coefficient
Design Rules
Feature
Min
μm
Spacing
μm
Emitter
3.5
2.0
Resistors
3.0
4.0
Contact
1.5
3.0
1st Layer metal
(1
μm)
3.5
2.0
2
nd layer metal
(2
μm)
6.0
3.0
Transistor parameters
(3.5 x 3.5um NPN emitter, LPNP 6um base width,
Substrate PNP
Parameter
Condition
NPN
LPNP
SPNP
Hfe
Ic=10
μA
Vcb=0
110
300
800
VAF
160V
42V
30V
BVceo
Ic=1
μA
>32V
>32V
>25V
BVcbo
Ic=1
μA
>45V
>45V
>45V
BVebo
Ib=1
μA
>5V
>32V
>45V
BVibo
Ib=1
μA
>32V
BVcsub
Ic=1
μA
>45V
NPN fT
Vce=2V
1.2GHz
LPNP fT
Vce=2V
20MHz
WXC is a 32 Volt Linear Bipolar Process featuring vertical NPN and lateral
PNP transistors with diffused resistors, polysilicon resistors, Schottky
diodes and nitride capacitors.


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