2SD1527 datasheet(2/7 Pages) HITACHI

Teilenummer	2SD1527

Bauteilbeschribung	Silicon NPN Triple Diffused

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Hersteller	HITACHI [Hitachi Semiconductor]

Direct Link	http://www.renesas.com/eng

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2SD1527

2

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to emitter breakdown

voltage

V

(BR)CEO

1000

—

V

I

C = 1 mA, RBE = ∞

Emitter to base breakdown

voltage

V

(BR)EBO

5—

—

V

I

E = 1 mA, IC = 0

Collector cutoff current

I

CBO

——

10

µAV

CB = 800 V, IE = 0

DC current transfer ratio

h

FE1

10

—

V

CE = 5 V, IC = 10 mA

h

FE2

10

—

V

CE = 5 V, IC = 100 mA

Base to emitter voltage

V

BE

—

1.2

V

CE = 5 V, IC = 100 mA

Collector to emitter saturation

voltage

V

CE (sat)

—

5VI

C = 300 mA, IB = 60 mA

Gain bandwidth product

f

T

—

5

—

MHz

V

CE = 20 V, IC = 50 mA

Collector output capacitance

Cob

—

5

—

pF

V

CB = 100 V, IE = 0, f = 1 MHz

0

50

100

150

Case temperature TC (°C)

Maximum Collector Dissipation Curve

30

20

10

Collector to emitter voltage VCE (V)

Area of Safe Operation

30

100

300

1,000

3,000

0.01

0.1

1.0

TC = 25°C

P

C

=

25

W

DC Operation

(50 V, 0.5 A)

(600 V, 0.042 A)

(1,000 V, 0.015 A)

Ähnliche Beschreibung - 2SD1527

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Hitachi Semiconductor	2SC4692	44Kb / 5P	SILICON NPN TRIPLE DIFFUSED DIFFUSED
	2SD2300	32Kb / 5P	Silicon NPN Triple Diffused
	2SD1606	35Kb / 6P	Silicon NPN Triple Diffused
	2SD2107	32Kb / 6P	Silicon NPN Triple Diffused
	2SC1881	35Kb / 6P	Silicon NPN Triple Diffused
	2SC2611	30Kb / 6P	Silicon NPN Triple Diffused
	2SC4499	39Kb / 8P	Silicon NPN Triple Diffused
	2SC4797	20Kb / 4P	Silicon NPN Triple Diffused
	2SC3322	45Kb / 7P	Silicon NPN Triple Diffused
Renesas Technology Corp	2SC1515	160Kb / 5P	Silicon NPN Triple Diffused
Renesas Technology Corp	2SD1126	147Kb / 7P	Silicon NPN Triple Diffused

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