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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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2SJ130S Datenblatt(PDF) 6 Page - Hitachi Semiconductor |
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2SJ130S Datenblatt(HTML) 6 Page - Hitachi Semiconductor |
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6 / 8 page  2SJ130(L), 2SJ130(S) 6 –2.0 –2.0 Source to Drain Voltage VSD (V) –1.6 –0.4 –0.8 –1.6 0 –0.8 –1.2 0 –0.4 –1.2 Reverse Drain Current vs. Source To Drain Voltage –5 V, –10 V VGS = 0, 10 V VGS = 0 Pulse Test 3 Pulse Width PW (s) 1.0 0.1 0.3 D = 1 10 µ 0.03 0.01 100 µ 10 m 100 m 1 10 1 m TC = 25°C 0.5 0.2 0.1 0.05 0.02 0.01 1 Shot Pulse T PW PDM D = T PW θch–c (t) = γ S (t) · θch–c θch–c = 6.25°C/W, T C = 25°C Normalized Transient Thermal Impedance vs. Pulse Width Switching Time Test Circuit Vin Monitor Vin –10 V 50 Ω D.U.T Vout Monitor RL VDD –30 V = . . Waveforms Vin Vout td (on) 10% t r t f 10% 90% 90% 10% 90% td (off) |
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Ähnliche Beschreibung - 2SJ130S |
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