2SJ319S datasheet(3/9 Pages) HITACHI

Teilenummer	2SJ319S

Bauteilbeschribung	Silicon P-Channel MOS FET

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Hersteller	HITACHI [Hitachi Semiconductor]

Direct Link	http://www.renesas.com/eng

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3 / 9 page

2SJ319(L), 2SJ319(S)

3

20

15

10

5

0

50

100

150

200

Case Temperature

Tc (

°C)

Power vs. Temperature Derating

–50

Drain to Source Voltage

V

(V)

DS

Maximum Safe Operation Area

–30

–10

–3

–1

–0.3

–0.1

–0.05

–1

–3

–10

–30

–100 –300 –500

100

µs

PW

=

10

ms

(1shot)

Operation in

this area is

limited by RDS(on)

10

µs

Ta = 25 °C

1 ms

DC

Operation

(Tc

=

25

°C)

–5

–4

–3

–2

–1

0

–4

–8

–12

–16

–20

Drain to Source Voltage

V

(V)

DS

Pulse Test

Typical Output Characteristics

–10 V

–8 V

–6 V

–5 V

–4 V

V

= –3.5 V

GS

–5

–4

–3

–2

–1

0

–2–4–6

–8

–10

Gate to Source Voltage

V

(V)

GS

V

= –10 V

Pulse Test

DS

75 °C

Typical Transfer Characteristics

Tc = –25 °C

25 °C

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