Datenblatt-Suchmaschine für elektronische Bauteile |
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2SJ363 Datenblatt(PDF) 3 Page - Hitachi Semiconductor |
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2SJ363 Datenblatt(HTML) 3 Page - Hitachi Semiconductor |
3 / 7 page 2SJ363 3 2.0 1.5 1.0 0.5 0 50 100 150 200 Ambient Temperature Ta ( °C) Maximum Channel Power Dissipation Curve Drain to Source Voltage V (V) DS Maximum Safe Operation Area –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 100 µs DC Operation Ta = 25 °C Operation in this area is limited by RDS(on) –2.0 –1.6 –1.2 –0.8 –0.4 0 –2 –4 –6 –8 –10 Drain to Source Voltage V (V) DS Typical Output Characteristics Pulse Test V = –1.5 V GS –3 V –2.5 V –2 V –4.5 V–4 V –5 –4 –3 –2 –1 0 –1–2–3 –4 –5 Gate to Source Voltage V (V) GS Typical Transfer Characteristics 75 °C 25 °C V = –10 V DS Ta = –25 °C |
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