Datenblatt-Suchmaschine für elektronische Bauteile |
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2SJ505L Datenblatt(PDF) 6 Page - Hitachi Semiconductor |
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2SJ505L Datenblatt(HTML) 6 Page - Hitachi Semiconductor |
6 / 10 page 2SJ505(L), 2SJ505(S) 6 1000 500 200 50 100 20 10 –0.1 –0.3 –3 0 –10 –20 –30 –40 –50 2000 1000 500 0 –20 –40 –60 –80 0 0 –4 –8 –12 –16 –20 –100 40 80 120 160 200 1000 200 500 100 20 50 10 –0.1 –0.3 –1 –3 –10 –1 –30 200 100 DS V GS V V = –50 V –25 V –10 V DD –100 V = –50 V –25 V –10 V DD 5000 –30 –100 r t d(off) t t f d(on) t –10 di / dt = 50 A / µs V = 0, Ta = 25 °C GS V = –10 V, V = –30 V PW = 10 µs, duty < 1 % GS DD = I = –50 A D 10000 20000 50000 Ciss Coss Crss V = 0 f = 1 MHz GS Body to Drain Diode Reverse Recovery Time Reverse Drain Current I (A) DR Drain to Source Voltage V (V) DS Typical Capacitance vs. Drain to Source Voltage Dynamic Input Characteristics Gate Charge Qg (nc) Switching Characteristics Drain Current I (A) D |
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