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2SJ548 Datenblatt(PDF) 3 Page - Hitachi Semiconductor |
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2SJ548 Datenblatt(HTML) 3 Page - Hitachi Semiconductor |
3 / 9 page 2SJ548 3 Main Characteristics 0.1 0.3 1 3 10 30 100 –20 –16 –12 –8 –4 0 –10 V –2 –4 –6 –8 –10 –6 V –20 –16 –12 –8 –4 0 Tc = 75°C 25°C –25°C –1 –2 –3 –4 –5 80 60 40 20 0 50 100 150 200 1000 300 100 30 10 3 1 0.3 0.1 –3.5 V V = –2.5 V GS –4 V –3 V DS V = –10 V Pulse Test Case Temperature Tc (°C) Power vs. Temperature Derating Drain to Source Voltage V (V) DS Maximum Safe Operation Area Drain to Source Voltage V (V) DS Typical Output Characteristics Gate to Source Voltage V (V) GS Typical Transfer Characteristics Ta = 25 °C 1 ms 10 µs 100 µs PW = 10 ms (1shot) DC Operation (Tc = 25°C) Operation in this area is limited by R DS(on) Pulse Test |
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