Datenblatt-Suchmaschine für elektronische Bauteile |
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2SJ551 Datenblatt(PDF) 4 Page - Hitachi Semiconductor |
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2SJ551 Datenblatt(HTML) 4 Page - Hitachi Semiconductor |
4 / 9 page 2SJ551(L),2SJ551(S) 4 –3.0 –2.5 –2.0 –1.5 –1.0 –0.5 0 –4 –8 –12 –16 –20 –1 –5 –20 –100 –2 –10 –50 1 0.2 0.01 –40 0 40 80 120 160 0 0.05 0.02 0.1 0.5 –0.1 –1 –10 –100 –0.3 –3 –30 100 10 0.1 1 0.3 3 30 I = –20 A D –10 A –5 A V = –4 V GS –10 V 0.30 0.25 0.20 0.15 0.10 0.05 –5, –10, –20 A V = –4 V GS –10 V I = –20 A D –5, –10 A 25 °C Tc = –25 °C 75 °C DS V = –10 V Pulse Test Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current Case Temperature Tc (°C) Static Drain to Source on State Resistance vs. Temperature Drain Current I (A) D Forward Transfer Admittance vs. Drain Current Pulse Test Pulse Test Pulse Test Gate to Source Voltage V (V) GS Drain Current I (A) D |
Ähnliche Teilenummer - 2SJ551 |
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