2SJ551 datasheet(4/9 Pages) HITACHI

Teilenummer	2SJ551

Bauteilbeschribung	Silicon P Channel MOS FET High Speed Power Switching

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Hersteller	HITACHI [Hitachi Semiconductor]

Direct Link	http://www.renesas.com/eng

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4 / 9 page

2SJ551(L),2SJ551(S)

4

–3.0

–2.5

–2.0

–1.5

–1.0

–0.5

0

–4

–8

–12

–16

–20

–1

–5

–20

–100

–2

–10

–50

1

0.2

0.01

–40

0

40

80

120

160

0

0.05

0.02

0.1

0.5

–0.1

–1

–10

–100

–0.3

–3

–30

100

10

0.1

1

0.3

3

30

I

= –20 A

D

–10 A

–5 A

V

= –4 V

GS

–10 V

0.30

0.25

0.20

0.15

0.10

0.05

–5, –10, –20 A

V

= –4 V

GS

–10 V

I

= –20 A

D

–5, –10 A

25 °C

Tc = –25 °C

75 °C

DS

V

= –10 V

Pulse Test

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

Static Drain to Source on State Resistance

vs. Drain Current

Case Temperature

Tc

(°C)

Static Drain to Source on State Resistance

vs. Temperature

Drain Current I

(A)

D

Forward Transfer Admittance vs.

Drain Current

Pulse Test

Gate to Source Voltage

V

(V)

GS

Drain Current

I

(A)

D

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Ähnliche Beschreibung - 2SJ551

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