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2SJ586 Datenblatt(PDF) 4 Page - Hitachi Semiconductor

Teilenummer 2SJ586
Bauteilbeschribung  Silicon P Channel MOS FET High Speed Switching
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Hersteller  HITACHI [Hitachi Semiconductor]
Direct Link  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SJ586 Datenblatt(HTML) 4 Page - Hitachi Semiconductor

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2SJ586
4
Drain Current I
(A)
D
Forwaed transfer Admittance
Vs. Drain Current
–0.001
–0.01
–0.1
–1.0
1.0
0.1
0.001
0.01
0.002
0.05
0.2
25 °C
75 °C
V
= –10 V
DS
Pulse test
Tc = –25 °C
100
50
5
2
1
20
10
Drain Current
I
(A)
D
Static drain to Source on State
Resistance vs. drain Current
V
= –4 V
GS
–2.5 V
Pulse Test
-0.01
-0.1
–1.0
–2
–1.6
–1.2
–0.8
–0.4
0
–2
–4
–6
–8
–10
–100 mA
Gate to Source Voltage V
(V)
GS
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Pulse Test
–10 mA
l
= –50 mA
D
20
16
12
8
4
–40
0
40
80
120
160
0
V
= -4V
GS
-10m A,-50m A,-100mA
Case Temperature
Tc
( °C)
Static drain to Source on State
Resistance vs. Temperature
I
= -50m A
D
-2.5V
-10m A
Pulse Test
-100m A
0.005
0.02
0.5


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