Datenblatt-Suchmaschine für elektronische Bauteile |
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2SJ586 Datenblatt(PDF) 4 Page - Hitachi Semiconductor |
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2SJ586 Datenblatt(HTML) 4 Page - Hitachi Semiconductor |
4 / 8 page 2SJ586 4 Drain Current I (A) D Forwaed transfer Admittance Vs. Drain Current –0.001 –0.01 –0.1 –1.0 1.0 0.1 0.001 0.01 0.002 0.05 0.2 25 °C 75 °C V = –10 V DS Pulse test Tc = –25 °C 100 50 5 2 1 20 10 Drain Current I (A) D Static drain to Source on State Resistance vs. drain Current V = –4 V GS –2.5 V Pulse Test -0.01 -0.1 –1.0 –2 –1.6 –1.2 –0.8 –0.4 0 –2 –4 –6 –8 –10 –100 mA Gate to Source Voltage V (V) GS Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test –10 mA l = –50 mA D 20 16 12 8 4 –40 0 40 80 120 160 0 V = -4V GS -10m A,-50m A,-100mA Case Temperature Tc ( °C) Static drain to Source on State Resistance vs. Temperature I = -50m A D -2.5V -10m A Pulse Test -100m A 0.005 0.02 0.5 |
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