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STP6506 Datenblatt(PDF) 2 Page - Stanson Technology

Teilenummer STP6506
Bauteilbeschribung  Dual P Channel Enhancement Mode MOSFET
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Hersteller  STANSON [Stanson Technology]
Direct Link  http://www.stansontech.com
Logo STANSON - Stanson Technology

STP6506 Datenblatt(HTML) 2 Page - Stanson Technology

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STP6506
Dual P Channel Enhancement Mode MOSFET
-2.8A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STP6506 2010. V1
ABSOULTE MAXIMUM RATINGS
(Ta = 25
Unless otherwise noted )
℃
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
(TJ=150
)
℃
TA=25℃
ID
-2.8
A
TA=70℃
-2.1
Pulsed Drain Current
IDM
-8
A
Continuous Source Current (Diode Conduction)
IS
-1.4
A
Power Dissipation
TA=25℃
PD
1.15
W
TA=70℃
0.75
Operation Junction Temperature
TJ
-55/150
℃
Storage Temperature Range
TSTG
-55/150
℃
Thermal Resistance-Junction
to Ambient
T≦10sec
RθJA
50
52
/W
℃
Steady State
90
90


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