Datenblatt-Suchmaschine für elektronische Bauteile |
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2SK1166 Datenblatt(PDF) 5 Page - Hitachi Semiconductor |
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2SK1166 Datenblatt(HTML) 5 Page - Hitachi Semiconductor |
5 / 9 page 2SK1165, 2SK1166 5 10 820 Gate to Source Voltage VGS (V) 8 2 412 16 0 4 6 ID = 5 A Drain to Source Saturation Voltage vs. Gate to Source Voltage 10 A Pulse Test 15 A 5 250 Drain Current ID (A) 2 0.1 1.0 5 20 0.5 0.5 1.0 Static Drain to Source on State Resistance vs. Drain Current VGS = 10 V Pulse Test 15 V 0.2 0.05 10 1.0 40 160 Case Temperature TC (°C) 0.8 0.2 0 80 120 0 0.4 0.6 Static Drain to Source on State Resistance vs. Temperature 15 A VGS = 10 V Pulse Test 10 A ID = 5 A –40 50 1.0 20 Drain Current ID (A) 20 2 0.5 2 10 0.5 5 10 Forward Transfer Admittance vs. Drain Current –25°C VDS = 20 V Pulse Test 0.2 1.0 5 TC = 25°C 75°C |
Ähnliche Teilenummer - 2SK1166 |
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Ähnliche Beschreibung - 2SK1166 |
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